TSM1N60L_07 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel Power MOSFET

TSM1N60L
600V N-Channel Power MOSFET
TO-252
TO-251
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
600
12 @ V_GS =10V
I_D (A)
1
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
● I_DSS and V_DS(on) specified at elevated temperature
Block Diagram
Ordering Information
Part No.
TSM1N60LCP RO
TSM1N60LCH C5
Package
TO-252
TO-251
Packing
2.5Kpcs / 13” Reel
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a,b
Single Pulse Drain to Source Avalanche Energy
(V_DD = 100V, V_GS=10V, I_AS=2A, L=10mH, R_G=25Ω)
Maximum Power Dissipation @Ta = 25 ^oC
I_DM
I_S
EAS
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
T_J, T_STG
1/7
Limit
600
±30
1
4
1
20
2.5
+150
-55 to +150
Unit
V
V
A
A
A
mJ
W
o_C
o_C
Version: A07