TSM1N45D Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – 450V N-Channel Power MOSFET

TSM1N45D
450V N-Channel Power MOSFET
SOP-8
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
8. Drain 1
7. Drain 1
6. Drain 2
5. Drain 2
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
450
4.25 @ V_GS =10V
I_D (A)
0.5
General Description
The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS
technology process. This advanced technology has been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand higher energy pulse in the avalanche and commutation
mode. There devices are well suited for electronic ballasts base and half bridge configuration.
Features
● Low gate charge @ typical 6.5nC
● Low Crss @ typical 6.5pF
● Avalanche energy specified
● Improved dv/dt capability
● Gate-Source Voltage ±50V guaranteed
Block Diagram
Ordering Information
Part No.
Package
TSM1N45DCS RLG
SOP-8
Note: “G” denotes for Halogen Free
Packing
2.5Kpcs / 13” Reel
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Drain to Source Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Maximum Power Dissipation @Ta = 25^oC
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RÓ¨_JA
Limit
450
±50
0.5
4
108
0.5
0.25
5.5
0.9
-55 to +150
Limit
80
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
o_C
Unit
o_C/W
1/8
Version: A12