TSM1N45 Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – 450V N-Channel Power MOSFET

TO-92
Pin Definition:
1. Gate
2. Drain
3. Source
TSM1N45
450V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
450
4.25 @ V_GS =10V
I_D (A)
0.25
General Description
The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS
technology process.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand higher energy pulse in the avalanche and commutation mode. There devices are well
suited for electronic ballasts base and half bridge configuration.
Features
Block Diagram
● Low gate charge @ typical 6.5nC
● Low Crss @ typical 6.5pF
● Avalanche energy specified
● Improved dv/dt capability
● Gate-Source Voltage ±30V guaranteed
Ordering Information
Part No.
TSM1N45CT B0
TSM1N45CT A3
Package
TO-92
TO-92
Packing
1Kpcs / Bulk
2Kpcs / Ammo
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Drain to Source Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
Total Power Dissipation @T_C =25ºC
Operating Junction and Storage Temperature Range
P_DTOT
T_J, T_STG
Thermal Performance
Parameter
Thermal Resistance - Junction to Lead
Thermal Resistance - Junction to Ambient
Symbol
RÓ¨_JL
RÓ¨_JA
N-Channel MOSFET
Limit
450
±30
0.5
4
108
0.5
0.25
5.5
2
-55 to +150
Limit
50
140
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
o_C
Unit
o_C/W

o_C/W
1/8
Version: A09