TSM19N20 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 200V N-Channel Power MOSFET

TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
TSM19N20
200V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
200
92 @ V_GS =10V
I_D (A)
18
Features
● Advanced Trench Technology
● Low R_DS(ON) 92mΩ (Max.)
● Low gate charge typical @ 55nC (Typ.)
● Low Crss typical @ 73pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM19N20CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T_C=25°C
Drain Current Pulsed (Note 1)
Avalanche Current
Avalanche Energy, L=10mH
Maximum Power Dissipation @ T_C=25°C
Storage Temperature Range
Operating Junction Temperature Range
* Limited by maximum junction temperature
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_STG
T_J
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RÓ¨_JC
RÓ¨_JA
Limit
200
±20
18
72
8
320
48
-55 to +150
-55 to +150
Limit
2.6
50
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
o_C/W
o_C/W
1/4
Version: A12