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TSM180P03CS Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30V P-Channel Power MOSFET
TSM180P03CS
30V P-Channel Power MOSFET
SOP-8
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
VDS
-30
VGS = -10V
18
RDS(on) (max) VGS = -4.5V
30
Qg
14.6
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM180P03CS RLG
SOP-8
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
P-Channel MOSFET
Absolute Maximum Ratings (Tc=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current (Note 1)
Power Dissipation @ TC = 25oC
Tc=25ºC
ID
Tc=100ºC
IDM
PD
Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Ambient
RÓ¨JA
Limit
-30
±20
-10
-6.3
-40
2.5
150
-55 to +150
Limit
50
Unit
V
V
A
A
A
W
ºC
oC
Unit
oC/W
1/5
Version: A14