TSM180N03PQ33 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel Power MOSFET

TSM180N03PQ33
30V N-Channel Power MOSFET
PDFN33
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
V_DS
30
V_GS = 10V
18
R_DS(on) (max) _{VGS = 4.5V}
28
Q_g
4.1
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM180N03PQ33 RGG PDFN33 5Kpcs / 13” Reel
● Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (T_C = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Single Pulse Avalanche Energy ^{(Note 2)}
Power Dissipation @ T_C = 25°C
Operating Junction Temperature
Storage Temperature Range
T_C=25°C
T_C=100°C
V_GS
I_D
I_DM
E_AS
P_D
T_J
T_STG
N-Channel MOSFET
Limit
30
±20
25
16
100
32
21
+150
-55 to +150
Unit
V
V
A
A
A
mJ
W
°C
°C
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
Thermal Resistance - Junction to Case
Symbol
R_Ó¨JA
R_Ó¨JC
Limit
62
6
Unit
°C/W
°C/W
1/5
Version: A14