TSM180N03CS Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel Power MOSFET

TSM180N03CS
30V N-Channel Power MOSFET
SOP-8
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
V_DS
30
V_GS = 10V
18
R_DS(on) (max) _{VGS = 4.5V}
28
Q_g
4.1
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM180N03CS RLG SOP-8
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (Tc=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Tc=25ºC
I_D
Tc=100ºC
Pulsed Drain Current ^{(Note 1)}
I_DM
Single Pulse Avalanche Energy ^{(Note 2)}
E_AS
Power Dissipation @ T_C = 25^oC
P_D
Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Ambient
R_Ó¨JA
N-Channel MOSFET
Limit
30
±20
9
5.7
36
32
2.5
150
-55 to +150
Limit
50
Unit
V
V
A
A
A
mJ
W
ºC
o_C
Unit
o_C/W
1/5
Version: A14