TSM160P02 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – P-Channel Power MOSFET

TSM160P02
Taiwan Semiconductor
P-Channel Power MOSFET
-20V, -11A, 16mΩ
FEATURES
● Improved dV/dt capability
● Fast Switching
● Suitable for 1.8V drive applications
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound
APPLICATION
● Load Switch
● Networking
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
V_DS
-20
V
V_GS = -4.5V
16
R_DS(on) (max) VGS = -2.5V
22
mΩ
V_GS = -1.8V
28
Q_g
27
nC
SOP-8
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
V_DS
-20
Gate-Source Voltage
V_GS
±10
Continuous Drain Current ^{(Note 1)}
T_C = 25°C
I_D
T_C = 100°C
-11
-7
Pulsed Drain Current ^{(Note 2)}
I_DM
-44
Total Power Dissipation @ T_C = 25°C
P_DTOT
2.5
Operating Junction and Storage Temperature Range
T_J, T_STG
- 55 to +150
UNIT
V
V
A
A
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
R_Ó¨JC
25
°C/W
Junction to Ambient Thermal Resistance
R_Ó¨JA
50
°C/W
Notes: RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RÓ¨JA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000161
1
Version: A15