TSM15N15 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 150V N-Channel Power MOSFET

TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
TSM15N15
150V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
150
75 @ V_GS =10V
I_D (A)
12
Features
● Advanced Trench Technology
● Low R_DS(ON) 75mΩ (Max.)
● Low gate charge typical @ 20.9nC (Typ.)
● Low Crss typical @ 58pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM15N15CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current
V_GS
T_C=25°C
T_C=70°C
T_A=25°C
I_D
T_A=70°C
Drain Current-Pulsed Note 1
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
T_C=25°C
T_C=70°C
T_A=25°C
T_A=70°C
I_DM
I_AS, I_AR
E_AS, E_AR
P_D
T_STG
T_J
* Limited by maximum junction temperature
Limit
150
±30
12
9
4
3
30
8.2
100
15.6
10
2
1.3
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
8
62
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
o_C/W
o_C/W
1/4
Version: A12