TSM15N03PQ33_14 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel Power MOSFET

TSM15N03PQ33
30V N-Channel Power MOSFET
PDFN33
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
V_DS
30
V_GS = 10V
12
R_DS(on) (max) _{VGS = 4.5V}
17
Q_g
3.6
Unit
V
mΩ
nC
Features
● Advanced Trench Technology
● Low On-Resistance
Ordering Information
Part No.
Package
Packing
TSM15N03PQ33 RGG PDFN33 5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^{(Note 3)}
Drain Current-Pulsed ^{(Note 1)}
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
T_C=25°C
T_C=70°C
T_A=25°C
T_A=70°C
T_C=25°C
T_C=70°C
T_A=25°C
T_A=70°C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_STG
T_J
30
±20
14
14
9.7
7.8
35
9
4
15.6
10
3.2
2.1
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
8
39
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
o_C/W
o_C/W
1/6
Version: B14