TSM15N03PQ33 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel Power MOSFET

PDFN33
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
TSM15N03PQ33
30V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
12 @ V_GS =10V
30
17 @ V_GS =4.5V
I_D (A)
7.8
7
Features
● Advanced Trench Technology
● Low On-Resistance
● Low gate charge typical @ 3.6nC (Typ.)
● Low Crss typical @ 38pF (Typ.)
Block Diagram
Ordering Information
Part No.
Package
Packing
TSM15N03PQ33 RGG PDFN33 5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C=25°C
Continuous Drain Current
T_C=70°C
T_A=25°C
I_D
T_A=70°C
Drain Current-Pulsed Note 1
I_DM
Avalanche Current, L=0.1mH
I_AS, I_AR
Avalanche Energy, L=0.1mH
E_AS, E_AR
T_C=25°C
Maximum Power Dissipation
T_C=70°C
T_A=25°C
P_D
T_A=70°C
Storage Temperature Range
T_STG
Operating Junction Temperature Range
T_J
* Limited by maximum junction temperature
Limit
30
±20
14
14
9.7
7.8
35
9
4
15.6
10
3.2
2.1
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
8
40
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
o_C/W
o_C/W
1/4
Version: A12