TSM150P03 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – P-Channel Power MOSFET

TSM150P03
Taiwan Semiconductor
P-Channel Power MOSFET
-30V, -30A, 15mΩ
Features
● Fast Switching
● Suitable for 4.5V drive applications
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound
Application
● Load Switch
● Networking
PDFN33
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
V_DS
-30
V
V_GS = -10V
15
R_DS(on) (max) _{VGS = -4.5V}
30
mΩ
Q_g
4.1
nC
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
Continuous Drain Current ^{(Note 1)}
Pulsed Drain Current ^{(Note 2)}
V_GS
T_C = 25°C
I_D
T_C = 100°C
I_DM
±20
-30
-19
-120
Total Power Dissipation @ T_C = 25°C
P_DTOT
23
Operating Junction and Storage Temperature Range
T_J, T_STG
- 55 to +150
UNIT
V
V
A
A
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
R_Ó¨JC
5.4
°C/W
Junction to Ambient Thermal Resistance
R_Ó¨JA
62
°C/W
Notes: RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RÓ¨JA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000165
1
Version: A15