TSM1412 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 20V N-Channel MOSFET

Preliminary
TSM1412
20V N-Channel MOSFET
SOT-363
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Notebook PC Application
● Portable Equipment Applications
Ordering Information
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
34 @ V_GS = 4.5V
20
38 @ V_GS = 2.5V
44 @ V_GS = 2.0V
Block Diagram
Part No.
Package
TSM1412CU6 RF SOT-363
Packing
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
Ta = 25^oC
Ta = 75^oC
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T_J
T_J, T_STG
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
RÓ¨_JF
RÓ¨_JA
Limit
20
±8
5
15
1.0
1.6
0.8
+150
-55 to +150
Limit
45
80
I_D (A)
3
3
3
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/4
Version: Preliminary