TSM13N50_12 Datasheet, PDF (1/10 Pages) Taiwan Semiconductor Company, Ltd – 500V N-Channel Power MOSFET

TO-220
TSM13N50
500V N-Channel Power MOSFET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
500
0.48 @ V_GS =10V
I_D (A)
13
General Description
The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
● Low R_DS(ON) 0.38Ω (Typ.)
● Low gate charge typical @ 36nC (Typ.)
● Low Crss typical @ 7.7pF (Typ.)
● Fast Switching
Block Diagram
Ordering Information
Part No.
TSM13N50CZ C0
TSM13N50CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(T_C=25℃)
Pulsed Drain Current *
Peak Diode Recovery dv/dt (Note 3)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
V_DS
V_GS
I_D
I_DM
dv/dt
E_AS
I_AR
E_AR
T_J
T_STG
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
TO-220
ITO-220
Thermal Resistance - Junction to Ambient TO-220 / ITO-220
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
500
±30
13
52
4.5
563
13
18.3
150
-55 to +150
Limit
0.63
2.4
62.5
Unit
V
V
A
A
V/ns
mJ
A
mJ
ºC
o_C
Unit
o_C/W
1/10
Version: C12