TSM13N50A Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – 500V N-Channel MOSFET

TSM13N50A
500V N-Channel MOSFET
ITO-220
TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
V_DS
R_DS(on) (max)
Q_g
500
0.48
31
Unit
V
Ω
nC
Features
● Improved dv/dt capability
● 100% EAS Guaranteed
Ordering Information
Part No.
Package
Packing
TSM13N50ACI C0G
ITO-220
50pcs / Tube
TSM13N50ACZ C0G
TO-220
50pcs / Tube
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (T_C=25^oC unless otherwise noted)
N-Channel MOSFET
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^{(Note 1)}
Pulsed Drain Current ^{(Note 1,2,3)}
Total Power Dissipation @ T_C=25^oC
Single Pulsed Avalanche Energy ^{(Note 4)}
T_C = 25^oC
T_C = 100^oC
Operating Junction and Storage Temperature Range
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
R_Ó¨JC
R_Ó¨JA
V_DS
V_GS
I_D
I_DM
P_DTOT
E_AS
T_J, T_STG
500
±30
13
8
52
52
542
- 55 to +150
Limit
ITO220
TO-220
2.4
0.6
65
62.5
Unit
V
V
A
A
W
mJ
o_C
Unit
o_C/W
o_C/W
1/7
Version: B14