TSM12N65 Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – 650V N-Channel Power MOSFET

ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
TSM12N65
650V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
650
0.8 @ V_GS =10V
I_D (A)
6
General Description
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
● Low R_DS(ON) 0.68Ω (Typ.)
● Low gate charge typical @ 41nC (Typ.)
● Low Crss typical @ 14.6pF (Typ.)
● Fast Switching
Block Diagram
Ordering Information
Part No.
TSM12N65CI C0
Package
ITO-220
Packing
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V_DS
V_GS
Tc = 25ºC
Tc = 100ºC
I_D
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 2
Single Pulse Avalanche Energy (Note 1)
Avalanche Current (Repetitive) (Note 1)
Total Power Dissipation @ T_C = 25^oC
I_DM
E_AS
I_AS
E_AR
I_AR
P_TOT
Operating Junction Temperature
Storage Temperature Range
Note: Limited by maximum junction temperature
T_J
T_STG
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
650
±30
12
4.5
48
273
12
7.6
12
45
150
-55 to +150
Limit
2.7
62.5
Unit
V
V
A
A
A
mJ
A
mJ
A
W
ºC
o_C
Unit
o_C/W
o_C/W
1/8
Version: A10