TSM12N02 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Enhancement Mode MOSFET

TSM12N02
N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Drain
3. Source
V_DS = 20V
I_D = 12A
R_{DS (on)}, Vgs @ 10V, Ids@8A = 30mΩ
R_{DS (on)}, Vgs @ 4.5V, Ids@6A = 40mΩ
Features
 Advanced trench process technology
 Fully Characterized Avalanche Voltage and Current
 Low gate charge
 High performance technology for low RDS(ON)
 High Density Cell Design for Ultra Low On-Resistance  Fast switching speed
Block Diagram
Ordering Information
Part No.
TSM12N02CP
Packing
Tape & Reel
Package
TO-252
Absolute Maximum Rating (TA = 25 ^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA = 25 ^oC
TA = 100 ^oC
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Parameter
Lead Temperature (1/8” from case)
Junction-to-case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: 1. Maximum DC current limited by the package
2. 1-in² 2oz Cu PCB board
Symbol
TL
Rθjc
Rθja
Limit
20
±12
12
30
1.3
2
+150
-55 to +150
Limit
10
2.2
50
Unit
V
V
A
W
W/^oC
o_C
o_C
Unit
S
o_C/W
TSM12N02
1-3
2006/05 rev. A