TSM126 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Depletion-Mode MOSFET

TSM126
N-Channel Depletion-Mode MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)(max)
600
700 @ V_GS = 0V
I_D (A)
0.03
Features
● Depletion Mode
● Low Gate Charge
Application
● Converters
● Telecom
Ordering Information
Part No.
Package
Packing
TSM126CX RFG SOT-23 3kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃
Continuous Drain Current
Pulsed Drain Current ^a
Tc=70℃
Maximum Power Dissipation
Soldering Temperature ^b
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
P_D
T_L
T_J
T_J, T_STG
Thermal Performance
Parameter
Thermal Resistance, Junction to Ambient
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Distance of 1.6mm from case for 10 seconds.
Symbol
RÓ¨_JA
Limit
600
±20
0.030
0.024
0.120
0.5
300
+150
-55 to +150
Limit
250
Unit
V
V
A
A
A
W
o_C
o_C
o_C
Unit
o_C/W
1/7
Version: A14