TSM10N80_14 Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – 800V N-Channel Power MOSFET

TO-220
TSM10N80
800V N-Channel Power MOSFET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
V_DS
800
R_DS(on) (max)
Q_g
1.05
53
Unit
V
Ω
nC
Features
● Low R_DS(ON) 1.05Ω (Max.)
● Low gate charge typical @ 53nC (Typ.)
● Improve dv/dt capability
Ordering Information
Part No.
Package
Packing
TSM10N80CZ C0G
TO-220
50pcs / Tube
TSM10N80CI C0G
ITO-220
50pcs / Tube
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and <1000ppm antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Single Pulse Avalanche Energy ^{(Note 2)}
Peak Diode Recovery dv/dt ^{(Note 3)}
Avalanche Current (Repetitive) ^{(Note 4)}
Repetitive Avalanche Energy ^{(Note 4)}
Operating Junction Temperature
Storage Temperature Range
V_DS
V_GS
I_D
I_DM
E_AS
dv/dt
I_AR
E_AR
T_J
T_STG
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
TO-220
ITO-220
Thermal Resistance - Junction to Ambient TO-220 / ITO-220
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
R_Ó¨JC
R_Ó¨JA
Limit
800
±30
9.5
38
267
4.5
9.5
29
150
-55 to +150
Limit
0.43
2.6
62.5
Unit
V
V
A
A
mJ
V
A
mJ
ºC
o_C
Unit
o_C/W
1/8
Version: C14