TSM10N80 Datasheet, PDF (1/10 Pages) Taiwan Semiconductor Company, Ltd – 800V N-Channel Power MOSFET

TO-220
TSM10N80
800V N-Channel Power MOSFET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
800
1.05 @ V_GS =10V
I_D (A)
9.5
General Description
The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic
lamp ballast based on half bridge.
Features
● Low R_DS(ON) 1.05Ω (Max.)
● Low gate charge typical @ 53nC (Typ.)
● Improve dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM10N80CZ C0
TSM10N80CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pc / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current *
I_DM
Peak Diode Recovery dv/dt (Note 3)
dv/dt
Single Pulse Avalanche Energy (Note 2)
E_AS
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
I_AR
E_AR
T_J
T_STG
Limit
800
±30
9.5
38
4.5
267
9.5
29
150
-55 to +150
Unit
V
V
A
A
V
mJ
A
mJ
ºC
o_C
1/10
Version: B13