TSM10N60_13 Datasheet, PDF (1/9 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel MOSFET

TO-220
ITO-220
TSM10N60
600V N-Channel MOSFET
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)(max)
600
0.75 @ V_GS =10V
I_D (A)
10
Features
● Advanced high dense cell design.
● High Power and Current handing capability.
Application
● Power Supply.
● Lighting.
Ordering Information
Part No.
TSM10N60CZ C0
TSM10N60CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
Absolute Maximum Rating (T_C = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^b
T_C = 25 ^oC
T_C = 100 ^oC
Total Power Dissipation @ T_C=25C
Single Pulsed Avalanche Energy ^c
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_Da
I_DMa
P_DTOT
E_AS
T_J, T_STG
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
RÓ¨_JC
Junction to Ambient Thermal Resistance
RÓ¨_JA
Notes a: Current limited by package
Notes b: Pulse width limited by the Maximum junction temperature
Notes c: L=0.75mH, I_AS=10A, V_DD=50V, R_G=25Ω, Starting T_j=25℃
Block Diagram
N-Channel MOSFET
Limit
TO-220
ITO-220
600
±30
10
6
40
166
50
41
- 55 to +150
Limit
0.75
2.5
63
Unit
V
V
A
A
W
mJ
o_C
Unit
o_C/W
o_C/W
1/9
Version: C13