TSM10N60 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel Power MOSFET

ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Preliminary
TSM10N60
600V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
600
0.75 @ V_GS =10V
I_D (A)
4.75
General Description
The TSM10N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low R_DS(ON) 0.75Ω (Max.)
● Low gate charge typical @ 45nC (Typ.)
● Low Crss typical @ 20pF (Typ.)
● Fast Switching
Ordering Information
Part No.
TSM10N60CI C0
Package
ITO-220
Packing
50pcs / Tube
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Ta = 25ºC
I_D
Ta = 100ºC
Pulsed Drain Current*
I_DM
Avalanche Current (Single) (Note 2)
I_AS
Single Pulse Avalanche Energy (Note 2)
E_AS
Avalanche Current (Repetitive) (Note 1)
I_AR
Repetitive Avalanche Energy (Note 1)
E_AR
Maximum Power Dissipation @Ta = 25^oC
P_D
Operating Junction Temperature
T_J
Storage Temperature Range
* Limited by maximum junction temperature
T_STG
N-Channel MOSFET
Limit
600
±30
9.5
5.8
38
9.5
487
38
14.5
43
150
-55 to +150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
ºC
o_C
1/6
Version: Preliminary