TSM10N06 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 60V N-Channel MOSFET

TSM10N06
60V N-Channel MOSFET
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DSON (mΩ)
65 @ V_GS = 10V
60
80 @ V_GS = 5V
110 @ V_GS = 4V
I_D (A)
10
10
9
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
Package
Packing
TSM10N06CP RO TO-252 2.5Kpcs / 13” Reel
Absolute Maximum Rating (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a,b
Total Power Dissipation @ T_C=25C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_DTOT
T_J
T_J, T_STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol
RÓ¨_JC
RÓ¨_JA
N-Channel MOSFET
Limit
60
±20
10
50
10
45
+150
- 55 to +150
Limit
2.78
50
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: A10