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TSM080N03E Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Power MOSFET | |||
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TSM080N03E
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 55A, 8mΩ
FEATURES
â Fast switching
â 100% EAS Guaranteed
â Green Device Available
â G-S ESD Protection Diode Embedded
APPLICATION
â Vcore / MB
â POL Application
â SMPS 2nd SR
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
30
V
VGS = 10V
8
RDS(on) (max)
mΩ
VGS = 4.5V
12.5
Qg
7.5
nC
PDFN56
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current (Note 1)
TC = 25°C
ID
55
TC = 100°C
35
Pulsed Drain Current (Note 2)
IDM
220
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
PDTOT
54
EAS
45
IAS
30
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RÓ¨JC
2.3
°C/W
Junction to Ambient Thermal Resistance
RÓ¨JA
62
°C/W
Notes: RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RÓ¨JA is guaranteed by design while RÓ¨CA is determined by the userâs board
design. RÓ¨JA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000014
1
Version: B15
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