TSM060N03CP Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel Power MOSFET

TSM060N03CP
30V N-Channel Power MOSFET
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
V_DS
30
V_GS = 10V
6
R_DS(on) (max)
V_GS = 4.5V
9
Q_g
11.1
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM060N03CP ROG TO-252 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (T_C=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C=25ºC
Continuous Drain Current
I_D
T_C=100ºC
Pulsed Drain Current ^{(Note 1)}
I_DM
Single Pulse Avalanche Energy ^{(Note 2)}
E_AS
Single Pulse Avalanche Current ^{(Note 2)}
I_AS
@ T_C=25^oC
Total Power Dissipation
Derate above T_C=25^oC
P_D
Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R_Ó¨JC
R_Ó¨JA
N-Channel MOSFET
Limit
30
±20
80
51
320
88
42
54
0.43
150
-55 to +150
Limit
2.3
62
Unit
V
V
A
A
A
mJ
A
W
W/ºC
ºC
o_C
Unit
o_C/W
o_C/W
1/5
Version: A14