TSM060N03 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Power MOSFET

TSM060N03
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 60A, 6mΩ
FEATURES
● 100% avalanche tested
● Fast switching
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound
APPLICATION
● Mobile device DC-DC conversion
● Point of Load (POL) DC-DC
● Secondary Switch Rectification
PDFN33
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
V_DS
30
V
V_GS =10V
6
R_DS(on) (max)
mΩ
V_GS =4.5V
9
Q_g
11.1
nC
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^{(Note 1)}
Pulsed Drain Current ^{(Note 2)}
T_C = 25°C
T_C = 100°C
Single Pulsed Avalanche Energy ^{(Note 3)}
Single Pulsed Avalanche Current ^{(Note 3)}
Total Power Dissipation @ T_C = 25°C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
E_AS
I_AS
P_DTOT
T_J, T_STG
30
±20
60
38
240
88
42
45
- 55 to +150
UNIT
V
V
A
A
mJ
A
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
R_Ó¨Jc
R_Ó¨JA
2.8
o_C/W
62
o_C/W
Notes: RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RÓ¨JA shown below for single device operation on FR-4 PCB in still air
Document Number: DS_P0000164
1
Version: A15