TSM055N03EPQ56 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel MOSFET

TSM055N03EPQ56
30V N-Channel MOSFET
PDFN56
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
V_DS
30
V_GS = 10V
5.5
R_DS(on) (max) _{VGS = 4.5V}
8.5
Q_g
11.1
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM055N03EPQ56 RLG PDFN56 2.5kpcs / 13” Reel
● Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Block Diagram
N-Channel MOSFET with ESD protection
Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed ^{(Note 1)}
Single Pulse Avalanche Energy ^{(Note 2)}
Maximum Power Dissipation @ T_C = 25℃
V_GS
T_C = 25℃
I_D
T_C = 100℃
I_DM
E_AS
P_D
Storage Temperature Range
T_STG
Operating Junction Temperature Range
T_J
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
R_Ó¨JC
R_Ó¨JA
Limit
30
±20
80
51
320
45
74
-55 to +150
-55 to +150
Limit
1.7
62
Unit
V
V
A
A
mJ
W
℃
℃
Unit
℃/W
℃/W
1/5
Version: A14