TSM036N03PQ56 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel MOSFET

TSM036N03PQ56
30V N-Channel MOSFET
PDFN56
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
V_DS
30
V_GS = 10V
3.6
R_DS(on) (max) _{VGS = 4.5V}
5.5
Q_g
24
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM036N03PQ56 RLG PDFN56 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm
antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed ^{(Note 1)}
Single Pulse Avalanche Energy ^{(Note 2)}
Single Pulse Avalanche Current
Maximum Power Dissipation @ T_C = 25℃
Storage Temperature Range
Operating Junction Temperature Range
T_C = 25℃
T_C = 100℃
V_DS
V_GS
I_D
I_DM
E_AS
I_AS
P_D
T_STG
T_J
30
±20
95
60
380
125
50
115
-55 to +175
-55 to +175
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R_Ó¨JC
R_Ó¨JA
Limit
1.3
62
Unit
V
V
A
A
mJ
A
W
℃
℃
Unit
℃/W
℃/W
1/5
Version: A14