TSM028N04PQ56 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 40V N-Channel MOSFET

TSM028N04PQ56
40V N-Channel MOSFET
PDFN56
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
Unit
V_DS
40
V
R_DS(on)(max)
2.8
mΩ
Q_g
78
nC
Features
● Low On-Resistance
● Low Input Capacitance
● Low Gate Charge
Ordering Information
Part No.
Package
Packing
TSM028N04PQ56 RLG PDFN56 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (T_C=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^{(Note 3)}
Drain Current-Pulsed ^{(Note 1)}
Single Pulse Avalanche Energy^, L=0.1mH
Maximum Power Dissipation ^{(Note 2)}
Storage Temperature Range
Operating Junction Temperature Range
T_C=25°C
T_A=25°C
T_C=25°C
T_A=25°C
V_DS
V_GS
I_D
I_DM
E_AS
P_D
T_STG
T_J
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
R_Ó¨JC
R_Ó¨JA
Limit
40
±20
140
42
550
201
83
4.4
-55 to +150
-55 to +150
Limit
1.5
28
Unit
V
V
A
A
mJ
W
°C
°C
Unit
o_C/W
o_C/W
1/6
Version: A14