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TSI30H100CW Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30A, 100V - 200V Trench Schottky Rectifiers
TSI30H100CW - TSI30H200CW
Taiwan Semiconductor
30A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1
23
I2PAK
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: I2PAK
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" menas green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
TSI30H
100CW
TSI30H
120CW
TSI30H
150CW
TSI30H
200CW
Maximum repetitive peak reverse voltage
VRRM
100
120
150
200
Maximum average
forward rectified current
per device
per diode
IF(AV)
30
15
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
200
Voltage rate of change (Rated VR)
dV/dt
Instantaneous forward
voltage per diode (Note1)
IF = 15A
TJ = 25°C
TJ = 125°C
VF
Instantaneous reverse current per
diode at rated reverse voltage
TJ = 25°C
TJ = 125°C
IR
Typical thermal resistance per diode
RθJC
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
10000
TYP MAX TYP MAX TYP MAX TYP MAX
0.69 0.78 0.75 0.84 0.81 0.90 0.84 0.92
0.61 0.68 0.64 0.73 0.68 0.77 0.70 0.79
- 250 - 250 - 150 - 150
10 35 10 35
3
20
3
20
2.7
- 55 to +150
- 55 to +150
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1411045
Version: C15