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TSH253 Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – High Sensitivity Omni-Polar Hall Effect Switch
TSH253
High Sensitivity Omni-Polar Hall Effect Switch
TO-92S
Pin Definition:
1. VCC
2. GND
3. Output
SOT-23
Pin Definition:
1. VCC
2. Output
3. GND
Description
TSH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior high-temperature
performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This
method reduces the offset voltage normally caused by device over molding, temperature dependencies, and
thermal stress. TSH253 includes the following on a single silicon chip: voltage regulator, Hall voltage generator,
small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication
processing is used to take advantage of low-voltage requirements, component matching, very low input-offset
errors, and small component geometries.
Features
Ordering Information
● CMOS Hall IC Technology
Part No.
Package
Packing
● Solid-State Reliability much better than reed switch TSH253CT B0G
TO-92S 1Kpcs / Bulk Bag
● Omni polar output switches with absolute value of
North or South pole from magnet
TSH253CX RFG
SOT-23
3Kpcs / 7” Reel
● Operation down to 1.8 V and Max at 6V.
Note: “G” denote for Halogen Free Product
● High Sensitivity for reed switch replacement
● ESD HBM ±4KV Min
Application
● Solid state switch, Revolution counter
● Lid close sensor for power supply devices
● Magnet proximity sensor for reed switch
replacement in high duty cycle applications.
● Safety Key on sporting equipment
● Speed sensor, Position Sensor, Rotation Sensor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Characteristics
Limit
Value
Unit
Supply voltage
Output Voltage
Reverse voltage
Magnetic flux density
VCC
VOUT
VCC/OUT
6
6
-0.3
Unlimited
V
V
V
Gauss
Output current
Operating Temperature Range
Storage temperature range
Maximum Junction Temp
Thermal Resistance - Junction to Ambient
TO-92S
SOT-23
IOUT
TOPR
TSTG
TJ
θJA
1
-40 to +85
-55 to +150
150
206
543
mA
oC
oC
oC
oC/W
Thermal Resistance - Junction to Case
TO-92S
SOT-23
θJC
148
410
oC/W
Package Power Dissipation
TO-92S
SOT-23
PD
606
230
mW
Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-
rated conditions for extended periods may affect device reliability.
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Version: C13