TSH251_14 Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – Micropower CMOS Output Hall Effect Switch

TSH251
Micropower CMOS Output Hall Effect Switch
TO-92S
Pin Definition:
1. VCC
2. GND
3. Output
TSOT-23
Pin Definition:
1. VCC
2. Output
3. GND
Description
TSH251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power
switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that
utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding,
temperature dependencies, and thermal stress. TSH251 is special made for low operation voltage at 1.65V, to
active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator,
small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer
fabrication processing is used to take advantage of low-voltage requirements, component matching, very low
input-offset errors, This device requires the presence of omni-polar magnetic fields for operation.
Features
Ordering Information
● CMOS Hall IC Technology
● Strong RF noise protection
● 1.65 to 3.5V for battery-powered applications
● Omni polar, output switches with absolute value of
North or South pole from magnet
Part No.
Package
Packing
TSH251CT B0G
TO-92S 1kpcs / Bulk Bag
TSH251CX RFG TSOT-23 3kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
● Operation down to 1.65V, micropower consumption _Application
● High Sensitivity for reed switch replacement
applications
● Solid state switch, Water Meter, Floating Meter
● Low sensitivity drift in crossing of Temp. range
● Handheld Wireless Handset Awake Switch
● Ultra Low power consumption at 5µA (avg.)
(Flip Cell/PHS Phone/Note Book/Flip Video Set)
● High ESD Protection, HBM > ±4KV( min )
● Lid close sensor for battery powered devices
● Totem-pole output
● Magnet proximity sensor for reed switch
replacement in low duty cycle applications
Absolute Maximum Ratings (T_A=25^oC unless otherwise noted)
Characteristics
Limit
Value
Unit
Supply voltage
Output Voltage
Reverse Voltage
Magnetic flux density
V_DD
V_OUT
V_DD/OUT
4.5
4.5
-0.3
Unlimited
V
V
V
Gauss
Output current
Operating temperature range
Storage temperature range
Maximum Junction Temp
Thermal Resistance - Junction to Ambient
TO-92S
TSOT-23
I_OUT
T_OPR
T_STG
T_J
R_θJA
1
-40 to +85
-65 to +150
150
206
543
mA
o_C
o_C
o_C
o_C/W
TO-92S
Thermal Resistance - Junction to Case
TSOT-23
R_θJC
148
o_C/W
410
Package Power Dissipation
TO-92S
TSOT-23
P_D
606
230
mW
Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-
rated conditions for extended periods may affect device reliability.
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Version: B14