TSG60N100CE Datasheet, PDF (1/9 Pages) Taiwan Semiconductor Company, Ltd – N-Channel IGBT with FRD

TO-264
Pin Definition:
1. Gate
2. Collector
3. Emitter
TSG60N100CE
N-Channel IGBT with FRD.
PRODUCT SUMMARY
V_CES (V)
V_GES (V)
1000
±20
I_C (A)
60
General Description
The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers
superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This
device is well suited for the resonant or soft switching application such as induction heating, microwave oven,
etc.
Features
Block Diagram
● 1000V NPT Trench Technology
● High Speed Switching
● Low Conduction Loss
Ordering Information
Part No.
TSG60N100CE C0
Package
TO-264
Packing
25pcs / Tube
NPT Trench IGBT
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
T_C=25^oC
T_C=100^oC
V_CES
V_GES
I_C
Pulsed Collector Current *
Diode Continuous Forward Current (T_C=100℃)
Max Power Dissipation
T_J=25^oC
T_J=100^oC
Operating Junction Temperature
Storage Temperature Range
* Repetitive rating: Pulse width limited by max. junction temperature
I_CM
I_F
P_D
T_J
T_STG
Limit
1000
±20
60
42
200
15
208
83
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
W
ºC
o_C
1/9
Version: B12