TSG40N120CE Datasheet, PDF (1/10 Pages) Taiwan Semiconductor Company, Ltd – N-Channel IGBT with FRD

TO-264
Pin Definition:
1. Gate
2. Collector
3. Emitter
TSG40N120CE
N-Channel IGBT with FRD.
PRODUCT SUMMARY
V_CES (V)
V_GES (V)
1200
±20
I_C (A)
40
General Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This
device is well suited for the resonant or soft switching application such as induction heating, microwave oven,
etc.
Features
Block Diagram
● 1200V NPT Trench Technology
● High Speed Switching
● Low Conduction Loss
Ordering Information
Part No.
TSG40N120CE C0
Package
TO-264
Packing
25pcs / Tube
NPT Trench IGBT
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
T_C=25^oC
T_C=100^oC
V_CES
V_GES
I_C
Pulsed Collector Current *
Diode Forward Current (T_C=100℃)
Diode Pulse Forward Current
Max Power Dissipation
T_J=25^oC
T_J=100^oC
Operating Junction Temperature
Storage Temperature Range
* Repetitive rating: Pulse width limited by max. junction temperature
I_CM
I_F
I_FM
P_D
T_J
T_STG
Limit
1200
±20
64
40
120
40
240
208
83
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
A
W
ºC
o_C
1/10
Version: B12