TSG25N120 Datasheet, PDF (1/9 Pages) Taiwan Semiconductor Company, Ltd – N-Channel IGBT with FRD.

TO-3PN
Pin Definition:
1. Gate
2. Collector
3. Emitter
TSG25N120CN
N-Channel IGBT with FRD.
PRODUCT SUMMARY
V_CES (V)
V_GES (V)
1200
±20
I_C (A)
25
General Description
The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This
device is well suited for the resonant or soft switching application such as induction heating, microwave oven,
etc.
Features
Block Diagram
● 1200V NPT Trench Technology
● High Speed Switching
● Low Conduction Loss
Ordering Information
Part No.
TSG25N120CN C0
Package
TO-3PN
Packing
30pcs / Tube
NPT Trench IGBT
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
T_C=25^oC
T_C=100^oC
V_CES
V_GES
I_C
Pulsed Collector Current *
I_CM
Diode Forward Current (T_C=100℃)
I_F
Diode Pulse Forward Current
Max Power Dissipation
I_FM
T_J=25^oC
T_J=100^oC
P_D
Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
* Repetitive rating: Pulse width limited by max. junction temperature
Limit
1200
±20
50
25
75
25
75
312
125
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
A
W
ºC
o_C
1/9
Version: B12