TSF40L45C Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Trench Schottky Rectifier

TSF40L45C thru TSF40L60C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
TSF40L45C
TSF40L60C
Maximum repetitive peak reverse voltage
Maximum average forward
rectified current
per device
per diode
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
Voltage rate of change (rated V_R)
V_RRM
I_F(AV)
I_FSM
dV/dt
Instantaneous forward
voltage per diode (Note1)
I_F = 20A
I_F = 20A
T_J = 25°C
T_J = 125°C
V_F
Maximum instantaneous reverse
current per diode at rated reverse
voltage
T_J = 25°C
I_R
T_J = 125°C
Typical thermal resistance per diode
R_θJC
Operating junction temperature range
T_J
Storage temperature range
T_STG
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
45
60
40
20
250
TYP.
0.50
0.46
10000
MAX.
TYP.
0.60
0.53
0.56
0.49
500
100
3
- 55 to +150
- 55 to +150
MAX.
0.63
0.59
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1412002
Version: B14