TSF30U60C Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Trench Schottky Rectifier

Trench Schottky Rectifier
TSF30U60C
Taiwan Semiconductor
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
TSF30U60C
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated V_R)
Instantaneous forward voltage per
diode ( Note1 )
I_F = 15A T_J = 25°C
I_F = 15A T_J = 125°C
Instantaneous reverse current per diode at rated ^TJ ^{= 25°C}
reverse voltage
T_J = 125°C
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
V_RRM
I_F(AV)
I_FSM
dV/dt
V_F
V_F
I_R
R_θJC
T_J
T_STG
TYP.
0.48
0.43
-
-
60
30
15
250
10000
4
- 55 to +150
- 55 to +150
MAX.
0.57
0.52
500
60
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1411055
Version: F14