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TSF30L100C Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Trench Schottky Rectifier
TSF30L100C - TSF30L200C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
TSF30L
100C
TSF30L
120C
TSF30L
150C
TSF30L
200C
Maximum repetitive peak reverse voltage
VRRM
100
120
150
200
Maximum average forward
rectified current
per device
per diode
IF(AV)
30
15
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
IFSM
160
Voltage rate of change (Rated VR)
dV/dt
Instantaneous forward
voltage per diode (Note1)
IF = 15A
IF = 15A
Instantaneous reverse current per
diode at rated reverse voltage
Typical thermal resistance per diode
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
VF
IR
RθJC
TJ
TSTG
10000
TYP MAX TYP MAX TYP MAX TYP MAX
0.73 0.80 0.80 0.88 0.84 0.92 0.86 0.96
0.64 0.70 0.67 0.76 0.70 0.78 0.73 0.81
-
250
-
250
-
100
-
100
7
25
4
25
3
15
3
15
4
4.5
- 55 to +150
- 55 to +150
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C
°C
Document Number: DS_1411089
Version: B14