TSF30H60C Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Trench Schottky Rectifier

TSF30H60C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compund (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOL
TSF30H60C
Maximum repetitive peak reverse voltage
V_RRM
60
Maximum average forward rectified
current
per device
per diode
I_F(AV)
30
15
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
170
Voltage rate of change (Rated V_R)
Isolation voltage from terminal to heatsink t = 1 min
Instantaneous forward voltage per diode
( Note1 )
I_F = 5A
I_F = 7.5A
I_F = 15A
I_F = 5A
I_F = 7.5A
I_F = 15A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
dV/dt
V_AC
V_F
I_R
R_θJC
T_J
T_STG
10000
1500
Min.
Typ.
-
0.45
-
0.48
-
0.55
-
0.36
-
0.41
-
0.52
-
15
-
10
4.5
- 55 to +150
- 55 to +150
Max.
-
-
0.70
-
-
-
500
45
UNIT
V
A
A
V/μs
V
V
μA
mA
O_C/W
O_C
O_C
Version: C14