TSF30H120C Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Trench MOS Barrier Schottky Rectifier

Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TSF30H120C
Taiwan Semiconductor
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs. max.
Weight: 1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25^oC unless otherwise noted)
PARAMETER
SYMBOL
TSF30H120C
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated V_R)
V_RRM
I_F(AV)
I_FSM
dV/dt
120
30
15
150
10000
Isolation voltage from terminal to heatsink t = 1 min
V_AC
1500
Breakdown voltage ( IR =1.0mA, Ta =25°C )
Instantaneous forward voltage per diode
( Note1 )
I_F = 5A
I_F = 7.5A
I_F = 15A
I_F = 5A
I_F = 7.5A
I_F = 15A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle
V_BR
V_F
V_F
I_R
R_θjC
T_J
T_STG
MIN.
120
-
-
-
-
-
-
-
-
TYP.
-
0.65
0.70
0.81
0.53
0.58
0.67
-
-
4.5
- 55 to +150
- 55 to +150
MAX.
-
-
-
0.93
-
-
0.75
500
20
UNIT
V
A
A
V/μs
V
V
V
μA
mA
O_C/W
O_C
O_C
Document Number: DS_D1401025
Version: B14