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TSF20U80C Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Dual High-Voltage Trench Schottky Rectifier
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TSF20U80C
Taiwan Semiconductor
Dual High-Voltage Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 0.56 Nm Max.
Weight: 1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
TSF20U80C
Maximum repetitive peak reverse voltage
VRRM
80
Maximum average forward rectified
current
per device
per diode
IF(AV)
20
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
100
Peak repetitive reverse surge current (Note 1)
Non-repetitive avalanche energy at L=60mH, per diode
Voltage rate of change (Rated VR)
Isolation voltage from terminal to heatsink t = 1 min
Breakdown voltage ( IR =1.0mA )
Instantaneous forward voltage
per diode ( Note 2 )
IF = 5A
IF = 10A
IF = 5A
IF = 10A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Operating junction temperature range
Storage temperature range
Note 1: 2.0 μs Pulse width, f=1.0 kHz
Note 2: Pulse test with pulse width=300 μs, 1% duty cycle
IRRM
EAS
dV/dt
VAC
VBR
VF
VF
IR
RθJC
TJ
TSTG
MIN.
80
-
-
-
-
-
-
0.5
110
10000
1500
TYP.
-
0.52
0.67
0.48
0.62
20
10
5
- 55 to +150
- 55 to +150
MAX.
-
-
0.77
-
0.70
600
20
UNIT
V
A
A
A
mJ
V/μs
V
V
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1411023
Version: F15