TSF20U45C_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Trench Schottky Rectifier

creat by ART
TSF20U45C thru TSF20U60C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
TSF20U45C
TSF20U60C
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
V_RRM
I_F(AV)
45
60
20
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
180
200
Voltage rate of change (rated VR)
I_F = 10A
Maximum instantaneous forward voltage
per diode ( Note 1 )
I_F = 20A
I_F = 10A
I_F = 20A
Maximum instantaneous reverse current per diode at
rated reverse voltage
Typical thermal resistance per diode
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
dV/dt
V_F
I_R
R_θJC
T_J
T_STG
10000
0.53
0.54
0.60
0.63
0.44
0.48
0.55
0.61
300
60
3
4
- 55 to +150
- 55 to +150
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1412003
Version: G14