TSF20U45C Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Trench MOS Barrier Schottky Rectifier

creat by ART
TSF20U45C thru TSF20U60C
Taiwan Semiconductor
Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs. max.
Weight: 1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25^oC unless otherwise noted)
PARAMETER
SYMBOL
TSF20U45C
TSF20U60C
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current (Note 1)
Voltage rate of change (Rated VR)
Isolation voltage from terminal to heatsink
t = 1 min
Breakdown voltage ( IR =1.0mA, Ta =25°C )
Maximum instantaneous forward voltage
per diode ( Note2 )
IF = 10A
T_J = 25°C
IF = 20A
IF = 10A
T_J = 125°C
IF = 20A
Maximum instantaneous reverse current per diode at ^{TJ = 25°C}
rated reverse voltage
T_J = 125°C
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: 2.0 μs Pulse Width, f=1.0 kHz
Note 2: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle
V_RRM
I_F(AV)
I_FSM
I_RRM
dV/dt
V_AC
V_BR
V_F
V_F
I_R
R_θjC
T_J
T_STG
45
180
0.5
1500
45
0.50
0.60
0.47
0.60
3
20
10
10000
500
100
- 55 to +150
- 55 to +150
60
200
3
2000
60
0.51
0.65
0.47
-
4
UNIT
V
A
A
A
V/μs
V
V
V
μA
mA
O_C/W
O_C
O_C
Document Number: DS_D1401024
Version: C14