TSF10H45C Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Trench Schottky Rectifier

TSF10H45C thru TSF10H60C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOL
TSF10H45C
TSF10H60C
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated V_R)
I_F = 2.5A
Instantaneous forward voltage per diode
( Note1 )
I_F = 5A
I_F = 2.5A
I_F = 5A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
V_RRM
I_F(AV)
I_FSM
dV/dt
V_F
I_R
R_θJC
T_J
T_STG
45
60
V
10
A
5
100
A
10000
V/μs
Min. Typ. Max. Min. Typ. Max.
- 0.44 -
- 0.46 -
- 0.48 0.58 - 0.54 0.62
V
- 0.33 -
- 0.38 -
- 0.40 0.50 - 0.48 0.56
-
- 500 -
- 500 μA
-
5
15
-
6
25
mA
5.5
- 55 to +150
- 55 to +150
O_C/W
O_C
O_C
Document Number: DS_D1411056
Version: E14