TSD965L Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vce(sat) NPN Transistor

TSD965L
Low Vce(sat) NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BV_CEO = 10V
Ic = 5A
V_{CE (SAT)}, = 0.23V(typ.) @Ic / Ib = 3A / 60mA
Features
Low V_{CE (SAT).}
High current capability
High allowable power dissipation
Structure
Epitaxial planar type.
Ordering Information
Part No.
TSD965LCT B0
TSD965LCT A3
Packing
Bulk Pack
Ammo Pack
Package
TO-92
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Symbol
Limit
Collector-Base Voltage
V_CBO
15V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CEO
V_EBO
I_C
10V
7
5
9 (note 1)
Collector Power Dissipation
P_D
0.75 (note 2)
Operating Junction Temperature
T_J
+150
Operating Junction and Storage Temperature Range
T_STG
- 55 to +150
Note: 1. Single pulse, Pw = 350uS, Duty <= 2%
2. When a device is mounted on a glass epoxy board, Measuring 35mm x 30mm x 1mm
Electrical Characteristics
Unit
V
V
V
A
W
o_C
o_C
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C = 100uA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 10uA, I_C = 0
V_CB = 15V, I_E = 0
V_EB = 5V, I_C = 0
I_C / I_B = 1.5A / 30mA
I_C / I_B = 3.0A / 60mA
I_C / I_B = 1.5A / 30mA
V_CE = 2V, I_C = 0.5A
V_CE = 2V, I_C = 2.0A
V_CE = 2V, I_C = 5.0A
V_CE = 6V, I_C = 50mA,
f = 100MHz
Output Capacitance
V_CB = 10V, f=1MHz
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Symbol Min Typ Max Unit
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(SAT)
V_CE(SAT)
V_CE(SAT)
h_FE
h_FE
h_FE
f_T
15
10
7
--
--
--
--
--
400
390
185
--
--
--
--
--
--
--
0.23
0.95
--
--
--
170
--
V
--
V
--
V
100 nA
100 nA
0.18 V
0.35 V
1.2
V
--
820
--
-- MHz
Cob
--
25
--
pF
TSD965L
1-4
2003/12 rev. A