TSD882_1112 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat NPN Transistor

TSD882
Low Vcesat NPN Transistor
TO-126
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
60V
30V
3A
0.5V @ I_C=2A, I_B=200mA
Features
Ordering Information
● Low V_CE(SAT) 0.3 @ I_C=2A, I_B=200mA (Typ.)
● Complementary part with TSB772
Structure
● Epitaxial Planar Type
● NPN Silicon Transistor
Part No.
Package
Packing
TSD882CK B0
TO-126
200pcs / Bulk
TSD882CK B0G
TO-126
200pcs / Bulk
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
Collector Power Dissipation
DC
Pulse
I_C
T_A=25^oC
T_C=25^oC
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
T_STG
Note: Single pulse, Pw≤350us, Duty≤2%
Limit
60
30
6
3
7 (note)
1
10
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (T_A=25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I_C =50uA, I_E =0
I_C = 1mA, I_B =0
I_E =50uA, I_C =0
V_CB =60V, I_E =0
V_EB =6V, I_C =0
I_C=2A, I_B=200mA
I_C=2A, I_B=200mA
V_CE =2V, I_C =20A
V_CE =2V, I_C =500mA
V_CE =2V, I_C =1A
V_CE =5V, I_C=500mA,
f=100MHz
BV_CBO
60
--
--
V
BV_CEO
30
--
--
V
BV_EBO
6
--
--
V
I_CBO
--
--
100
nA
I_EBO
--
--
100
nA
*V_CE(SAT)
--
0.3
0.5
V
*V_BE(SAT)
--
--
1.5
V
*h_FE 1
160
--
--
*h_FE 2
180
--
390
*h_FE 3
150
--
--
f_T
--
270
--
MHz
Output Capacitance
V_CB = 10V, f=1MHz
* Pulse Test: Pulse Width ≤300uS, Duty Cycle≤2%
Cob
--
16
--
pF
1/6
Version: C11