TSD882_11 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat NPN Transistor

TSD882
Low Vcesat NPN Transistor
TO-126
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
50V
50V
3A
0.5V @ I_C / I_B = 2A / 200mA
Features
Ordering Information
● Low V_CE(SAT) 0.25 @ I_C / I_B = 2A / 200mA (Typ.)
● Complementary part with TSB772
Structure
● Epitaxial Planar Type
● NPN Silicon Transistor
Part No.
Package
Packing
TSD882CK B0
TO-126
250pcs / Bulk
TSD882CK B0G
TO-126
250pcs / Bulk
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
Collector Power Dissipation
DC
Pulse
I_C
Ta = 25^oC
Tc = 25^oC
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
T_STG
Note: Single pulse, Pw≤350us, Duty≤2%
Limit
50
50
5
3
7 (note)
1
10
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage I_C = 50uA, I_E = 0
Collector-Emitter Breakdown Voltage I_C = 1mA, I_B = 0
Emitter-Base Breakdown Voltage
I_E = 50uA, I_C = 0
Collector Cutoff Current
V_CB = 50V, I_E = 0
Emitter Cutoff Current
V_EB = 3V, I_C = 0
Collector-Emitter Saturation Voltage I_C / I_B = 2A / 200mA
Base-Emitter Saturation Voltage
I_C / I_B = 2A / 200mA
DC Current Transfer Ratio
V_CE = 2V, I_C = 1A
Transition Frequency
V_CE =6V, I_C=50mA,
f=100MHz
Output Capacitance
V_CB = 10V, f=1MHz
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
BV_CBO
60
--
--
V
BV_CEO
50
--
--
V
BV_EBO
5
--
--
V
I_CBO
--
--
1
uA
I_EBO
--
--
1
uA
*V_CE(SAT)
--
0.25 0.5
V
*V_BE(SAT)
--
--
2
V
*h_FE
100
--
500
f_T
--
90
--
MHz
Cob
--
45
--
pF
1/4
Version: B11