TSD882_07 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat NPN Transistor

TSD882
Low Vcesat NPN Transistor
TO-126
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV_CBO
BV_CEO
I_C
V_CE(SAT)
50V
50V
3A
0.5V @ I_C / I_B = 2A / 200mA
Features
Ordering Information
● Low V_CE(SAT) 0.25 @ I_C / I_B = 2A / 200mA (Typ.)
● Complementary part with TSB772
Structure
Part No.
TSD882CK B0
Package
TO-126
Packing
1Kpcs / Bulk
● Epitaxial Planar Type
● NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
Collector Power Dissipation
SOT-89
TO-92
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw≤350us, Duty≤2%
T_J
T_STG
Limit
50
50
5
3
7 (note)
0.75
0.625
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Specifications (Ta = 25^oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
I_C = 50uA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 50uA, I_C = 0
BV_CBO
60
BV_CEO
50
BV_EBO
5
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V_CB = 50V, I_E = 0
V_EB = 3V, I_C = 0
I_C / I_B = 2A / 200mA
I_C / I_B = 2A / 200mA
I_CBO
--
I_EBO
--
*V_CE(SAT)
--
*V_BE(SAT)
--
DC Current Transfer Ratio
Transition Frequency
V_CE = 2V, I_C = 1A
V_CE =6V, I_C=50mA,
f=100MHz
*h_FE
100
f_T
--
Output Capacitance
V_CB = 10V, f=1MHz
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
Cob
--
Typ
--
--
--
--
--
0.25
--
--
90
45
Max
--
--
--
1
1
0.5
2
500
--
--
Unit
V
V
V
uA
uA
V
V
MHz
pF
1/4
Version: A07