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TSD882S_07 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Low Vcesat NPN Transistor | |||
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TSD882S
Low Vcesat NPN Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
SOT-89
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCBO
BVCEO
IC
VCE(SAT)
60V
50V
3A
0.5V @ IC / IB = 2A / 200mA
Features
Ordering Information
â Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.)
â Complementary part with TSB772S
Structure
â Epitaxial Planar Type
â NPN Silicon Transistor
Part No.
TSD882SCT B0
TSD882SCT A3
TSD882SCY RM
Package
TO-92
TO-92
SOT-89
Packing
1Kpcs / Bulk
2Kpcs / Ammo
1Kpcs / 7â Reel
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
Collector Current
DC
Pulse
IC
Collector Power Dissipation
SOT-89
TO-92
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pwâ¤350us, Dutyâ¤2%
TJ
TSTG
Limit
60
50
5
3
7 (note)
0.75
0.625
+150
- 55 to +150
Unit
V
V
V
A
W
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
IC = 50uA, IE = 0
IC = 1mA, IB = 0
IE = 50uA, IC = 0
VCB = 50V, IE = 0
VEB = 3V, IC = 0
IC / IB = 2A / 200mA
IC / IB = 2A / 200mA
VCE = 2V, IC = 1A
VCE =6V, IC=50mA,
f=100MHz
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*VBE(SAT)
*hFE
fT
60
50
5
--
--
--
--
100
--
Output Capacitance
VCB = 10V, f=1MHz
* Pulse Test: Pulse Width â¤380uS, Duty Cycleâ¤2%
Cob
--
Typ
--
--
--
--
--
0.25
--
--
90
45
Max
--
--
--
1
1
0.5
2
500
--
--
Unit
V
V
V
uA
uA
V
V
MHz
pF
1/5
Version: A07
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