TSD882S Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – Low Vce(sat) NPN Transistor

TSD882S
Low Vce(sat) NPN Transistor
Pin assignment:
TO-92
1. Emitter
2. Collector
3. Base
SOT-89
1. Base
2. Collector
3. Emitter
BV_CEO = 50V
Ic = 3A
V_{CE (SAT)}, = 0.3V(typ.) @Ic / Ib = 2A / 20mA
Features
— Low V_{CE (SAT).}
— Excellent DC current gain characteristics
Structure
— Epitaxial planar type.
— Complimentary to TSB772S
Ordering Information
Part No.
TSD882SCT
TSD882SCY
Packing
Bulk Pack
Tape & Reel
Package
TO-92
SOT-89
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
TO-92
SOT-89
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 350uS, Duty <= 2%
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
Limit
50V
50V
5
3
7 (note 1)
0.75
0.50
+150
- 55 to +150
Unit
V
V
V
A
W
o_C
o_C
Electrical Characteristics
Ta = 25 ^oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
I_C = 50uA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 50uA, I_C = 0
V_CB = 40V, I_E = 0
V_EB = 4V, I_C = 0
I_C / I_B = 2.0A / 0.2A
V_CE = 2V, I_C = 1A
Transition Frequency
V_CE = 5V, I_C = 100mA,
f = 100MHz
Output Capacitance
V_CB = 10V, f=1MHz
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Symbol Min Typ Max Unit
BV_CBO
50
--
--
V
BV_CEO
50
--
--
V
BV_EBO
5
--
--
V
I_CBO
--
--
1
uA
I_EBO
--
--
uA
V_CE(SAT)
--
0.3
0.5
V
h_FE
160
--
500
f_T
--
90
-- MHz
Cob
45
--
pF
TSD882S
1-3
2003/12 rev. A